2N7002T mosfet ( n-channel ) features power dissipation p d: 0.15 w (tamb=25 ) collector current i d: 115 ma collector-base voltage v ds : 60 v operating and storage j unction temperature range t j, t stg: -55 to +150 marking: 72 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit drain-source breakdown voltage * v (br)dss v gs =0v,i d =10a 60 gate-threshold voltage* v th(gs) v ds =v gs , i d =250a 1 2 v gate-body leakage* l gss v ds =0v, v gs =20v 10 na v ds =60v, v gs =0v 1 zero gate voltage drain current * i dss v ds =60v,v gs =0v,t j =125 500 a on-state drain current * i d(on) v gs =10v, v ds =7.5v 500 1000 ma v gs =5v, i d =50ma 3.2 7.5 drain-source on-resistance * r ds(0n) v gs =10v, i d =500ma 4.4 13.5 ? forward tran conductance * g fs v ds =10v, i d =200ma 80 ms input capacitance c iss 22 50 output capacitance c oss 11 25 reverse transfer capacitance c rss v ds =25v, v gs =0v f=1mhz 2 5 pf switching turn-on time t d(on) 7 20 turn-off time t d(off) v dd =30v,r l =150 i d =200ma,v gen =10v r gen =25 ? 11 20 ns * pulse test. sot-523 1. gate 2. source 3. drain 2N7002T http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
2N7002T http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. wej electronic co.,ltd
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